N. Holonyak Jr.: search on Z-Library

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1

Planar Zn diffusion in InP

E.A. Rezek, P.D. Wright, N. Holonyak Jr.

Journal:

Solid-State Electronics

Year:

1978

Language:

english

File:

PDF, 582 KB

english, 1978

2

Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser

P.K. Kondratko, Shun-Lien Chuang, G. Walter, N. Holonyak, Jr., R.D. Heller, Xuebing Zhang, R.D. Dupuis

Journal:

IEEE Photonics Technology Letters

Year:

2005

Language:

english

File:

PDF, 156 KB

english, 2005

3

Growth and characterization of AlGaAs/GaAs quantum well lasers

R.D. Burnham, W. Streifer, T.L. Paoli, N. Holonyak Jr.

Journal:

Journal of Crystal Growth

Year:

1984

Language:

english

File:

PDF, 1.10 MB

english, 1984

4

The semiconductor laser: a thirty-five-year perspective

Holonyak, N., Jr.

Journal:

Proceedings of the IEEE

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

5

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2004 - San Jose, CA (Monday 26 January 2004)] Physics and Simulation of Optoelectronic Devices XII - Quantum well to quantum dot phonon-assisted tunneling

Chang, Shu-Wei W., Chuang, Shun-Lien, Holonyak, Jr., Nick, Osinski, Marek, Amano, Hiroshi, Henneberger, Fritz

Year:

2004

Language:

english

File:

PDF, 346 KB

english, 2004

6

From transistors to light emitters

Holonyak, N., Jr.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2000

Language:

english

File:

PDF, 536 KB

english, 2000

7

Semiconductor alloy lasers--1962

Holonyak, N., Jr.

Journal:

IEEE Journal of Quantum Electronics

Year:

1987

Language:

english

File:

PDF, 3.40 MB

english, 1987

8

Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP

R.J. Nelson, N. Holonyak Jr.

Journal:

Journal of Physics and Chemistry of Solids

Year:

1976

Language:

english

File:

PDF, 1.01 MB

english, 1976

9

Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAsz

R.J. Nelson, N. Holonyak Jr., W.R. Hitchens, D. Lazarus, M. Altarelli

Journal:

Solid State Communications

Year:

1976

Language:

english

File:

PDF, 459 KB

english, 1976

10

Gas plasma gun (GPG) electron-beam pumped semiconductor laser

Verdeyen, J.T., Johnson, W.L., Cherrington, B.E., Holonyak, N., Jr., Campbell, J.C., Lee, M.H., Craford, M.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1973

Language:

english

File:

PDF, 184 KB

english, 1973

11

IIIb-5.5 liquid phase epitaxial InGaPAs multilayered heterojunction lasers exhibiting "Quantum size effects" (late paper)

Rezek, E.A., Holonyak, N., Jr., Vojak, B.A., Stillman, G.E., Rossi, J.A., Keune, D.L., Fairing, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1977

Language:

english

File:

PDF, 144 KB

english, 1977

12

Alloy clustering and its effect on impact ionization in ternary III–V compounds

M.S. Burroughs, K. Hess, N. Holonyak Jr., W.D. Laidig, G.E. Stillman

Journal:

Solid-State Electronics

Year:

1982

Language:

english

File:

PDF, 638 KB

english, 1982

13

Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si

Hall, D.C., Deppe, D.G., Holonyak, N., Jr., Matyi, R.J., Shichijo, H., Epler, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 157 KB

english, 1988

14

IVA-6 high-energy (λ ≤ 7300 Å) 300-K operations of single- and multiple-stripe quantum-well heterostructure laser diodes in an external grating cavity

Epler, J.E., Holonyak, N., Jr., Brown, J.M., Burnham, R.D., Streifer, W., Paoli, T.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 328 KB

english, 1984

15

IIIA-1 liquid phase epitaxial (LPE) grown junction In1-xGaxP (x ∼ 0.63) laser of wavelength λ ∼ 5900 Å (2.10 eV, 77 K)

Hitchens, W.R., Holonyak, N., Jr., Lee, M.H., Campbell, J.C., Coleman, J.J., Groves, W.O., Keune, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1974

Language:

english

File:

PDF, 194 KB

english, 1974

16

Opto-electronic device structures fabricated by impurity induced disordering

R.L. Thornton, R.D. Burnham, T.L. Paoli, N. Holonyak Jr., D.G. Deppe

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 707 KB

english, 1986

17

I-1 The first 40 years: Reminiscences of some of DRC's significant events

Holonyak, N., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 101 KB

english, 1982

18

Carrier collection in a semiconductor quantum well

H. Shichijo, R.M. Kolbas, N. Holonyak Jr., R.D. Dupuis, P.D. Dapkus

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 267 KB

english, 1978

19

High pressure experiments on AlxGa1−xAs-GaAs quantum-well heterostructure lasers

S.W Kirchoefer, N Holonyak Jr., K Hess, D.A Gulino, H.G Drickamer, J.J Coleman, P.D Dapkus

Journal:

Solid State Communications

Year:

1982

Language:

english

File:

PDF, 335 KB

english, 1982

20

Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers

N. Holonyak Jr., B.A. Vojak, R.M. Kolbas, R.D. Dupuis, P.D. Dapkus

Journal:

Solid-State Electronics

Year:

1979

Language:

english

File:

PDF, 544 KB

english, 1979

21

The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures

B.A. Vojak, N. Holonyak Jr., W.D. Laidig, K. Hess, J.J. Coleman, P.D. Dapkus

Journal:

Solid State Communications

Year:

1980

Language:

english

File:

PDF, 399 KB

english, 1980

22

Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodes

J.S. Moore, N. Holonyak Jr., M.D. Sirkis

Journal:

Solid-State Electronics

Year:

1967

Language:

english

File:

PDF, 859 KB

english, 1967

23

Gallium arsenide-phosphide: Crystal, diffusion and laser properties

C.J. Nuese, G.E. Stillman, M.D. Sirkis, N. Holonyak Jr.

Journal:

Solid-State Electronics

Year:

1966

Language:

english

File:

PDF, 1.54 MB

english, 1966

24

Space-charge-limited emission and oscillation effects in gold-doped silicon p-"i"-n diodes

Moore, J.S., Holonyak, N., Jr., Sirkis, M.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1967

Language:

english

File:

PDF, 189 KB

english, 1967

25

Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions

P.D. Wright, E.A. Rezek, N. Holonyak Jr.

Journal:

Journal of Crystal Growth

Year:

1977

Language:

english

File:

PDF, 1.16 MB

english, 1977

26

IVA-8 low-threshold AlGaAs laser diodes fabricated by silicon impurity-induced disordering

Thornton, R.L., Burnham, R.D., Paoli, T.L., Holonyak, N., Jr., Deppe, D.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 330 KB

english, 1985

27

High-uniformity liquid phase epitaxial InGaAsP (λ = 1.3 μm)

P.E. Brunemeier, T.J. Roth, N. Holonyak Jr., G.E. Stillman

Journal:

Journal of Crystal Growth

Year:

1984

Language:

english

File:

PDF, 282 KB

english, 1984

28

Interface abruptness and dissolution-induced “damage” in LPE InGaAsP heterostructures

P.E. Brunemeier, K.C. Hsieh, D.G. Deppe, J.M. Brown, N. Holonyak Jr.

Journal:

Journal of Crystal Growth

Year:

1985

Language:

english

File:

PDF, 476 KB

english, 1985

29

Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures

K. Hess, N. Holonyak Jr., W.D. Laidig, B.A. Vojak, J.J. Coleman, P.D. Dapkus

Journal:

Solid State Communications

Year:

1980

Language:

english

File:

PDF, 1.09 MB

english, 1980

30

Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å)

R.D. Dupuis, P.D. Dapkus, R.M. Kolbas, N. Holonyak Jr.

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 233 KB

english, 1978

31

Optical phase shift measurement (77°K) of carrier decay time in direct GaAsP

D.R. Scifres, N. Holonyak Jr., R.D. Burnham, H.R. Zwicker

Journal:

Solid-State Electronics

Year:

1971

Language:

english

File:

PDF, 734 KB

english, 1971

32

VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

Deppe, D.G., Holonyak, N., Jr., Nam, D.W., Hsieh, K.C., Kaliski, R.W., Matyi, R.J., Lee, J.W., Shichijo, H., Epler, J.E., Burnham, R.D., Chung, H.F., Paoli, T.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 163 KB

english, 1987

33

"Hump" current dependence upon trapping effects and the relationship to some aspects of the forward-injection failure of GaAs tunnel diodes

Holonyak, N., Jr., Selig, T., Smith, J.

Journal:

IRE Transactions on Electron Devices

Year:

1961

Language:

english

File:

PDF, 328 KB

english, 1961

34

SPIE Proceedings [SPIE Semiconductor Conferences - Bay Point, FL (Monday 23 March 1987)] Advanced Processing of Semiconductor Devices - Impurity Induced Disordering Of Heterojunction Interfaces: Phenomenology And Laser Device Applications

Thornton, R. L., Burnham, R. D., Holonyak,Jr., N., Epler, J. E., Paoli, T. L., Mukherjee, Sayan D.

Year:

1987

Language:

english

File:

PDF, 2.73 MB

english, 1987

35

Defect and phonon effects in In1−χGaχP p-n tunnel junctions

H.W. Korb, A.M. Andrews, N. Holonyak Jr., R.D. Burnham, C.B. Duke, G.G. Kleiman

Journal:

Solid State Communications

Year:

1971

Language:

english

File:

PDF, 421 KB

english, 1971

36

IIIA-3 stimulated emission in strained-layer quantum-well heterostructures

Holonyak, N., Jr., Camras, M.D., Brown, J.M., Ludowise, M.J., Dietze, W.T., Lewis, C.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 106 KB

english, 1983

37

Quantum-well AlxGa1 - xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

Dupuis, R., Dapkus, P., Kolbas, R., Holonyak, N., Jr.

Journal:

IEEE Journal of Quantum Electronics

Year:

1979

Language:

english

File:

PDF, 823 KB

english, 1979

38

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, California, United States (Saturday 22 January 2005)] Novel In-Plane Semiconductor Lasers IV - Tunneling injection quantum dot lasers

Chuang, Shun-Lien, Mermelstein, Carmen, Bour, David P., Kondratko, Piotr K., Kim, Jungho, Walter, Gabriel, Holonyak, Jr., Nick, Heller, R, Zhang, X., Dupuis, R.

Year:

2005

Language:

english

File:

PDF, 414 KB

english, 2005

39

Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts

A.M. Andrews, N. Holonyak Jr.

Journal:

Solid-State Electronics

Year:

1972

Language:

english

File:

PDF, 440 KB

english, 1972

40

Absorption measurements at high pressure (0–10kbar) on strained superlattices

P. Garrilovic, K. Meehan, N. Holonyak Jr., K. Hess, W.P. Zurawsky, H.G. Drickamer, M.J. Ludowise, W.T. Dietze, C.R. Lewis

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 254 KB

english, 1983

41

Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures

C.P. Kuo, R.M. Fletcher, T.D. Osentowski, M.G. Craford, D.W. Nam, N. Holonyak Jr., K.C. Hsieh, J.E. Fouquet

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 1.39 MB

english, 1988

42

Resonant tunneling in a GaAs1−xPx-GaAs strained-layer quantum-well heterostructure

P. Gavrilovic, J.M. Brown, R.W. Kaliski, N. Holonyak Jr., K. Hess, M.J. Ludowise, W.T. Dietze, C.R. Lewis

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 310 KB

english, 1984

43

Quantum well laser operation at low temperature in strong magnetic fields

P. Gavrilovic, K. Hess, N. Holonyak Jr., R.D. Burnham, T.L. Paoli, W. Streifer

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 254 KB

english, 1983

44

Solid solubility of Zn in Si

M.M. Blouke, N. Holonyak Jr., B.G. Streetman, H.R. Zwicker

Journal:

Solid State Communications

Year:

1969

Language:

english

File:

PDF, 176 KB

english, 1969

45

The red-black effect in Ga(As1−xPx)

Nick Holonyak Jr., S.F. Bevacqua

Journal:

Solid-State Electronics

Year:

1964

Language:

english

File:

PDF, 85 KB

english, 1964

46

Temperature dependence of threshold current for a quantum-well heterostructure laser

K. Hess, B.A. Vojak, N. Holonyak Jr., R. Chin, P.D. Dapkus

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 496 KB

english, 1980

47

Heterojunction laser operation of N-free and N-doped GaAs1−yPy (y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct-indirect transition (y∼yc?0.46)

Coleman, J. J., Holonyak Jr., N., Ludowise, M. J., Wright, P. D., Groves, W. O., Keune, D. L., Craford, M. G.

Journal:

Journal of Applied Physics

Year:

1975

Language:

english

File:

PDF, 720 KB

english, 1975

48

TA-B7 phonon-assisted recombination in quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructure lasers

Holonyak, N., Jr., Kolbas, R.M., Laidig, W.D., Vojak, B.A., Chin, R., Dupuis, R.D., Dapkus, P.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1979

Language:

english

File:

PDF, 166 KB

english, 1979

49

The Metamorphosis of the Transistor into a Laser

Feng, Milton, Holonyak Jr., Nick

Journal:

Optics and Photonics News

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

50

Negative Electron Affinity Devicesby R. L. Bell

Review by: Nick Holonyak Jr.

Journal:

American Scientist

Year:

1974

Language:

english

File:

PDF, 340 KB

english, 1974

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